Технічний опис MUR2X120A06 GeneSiC Semiconductor
Description: DIODE GEN PURP 600V 120A SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 120A, Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A, Current - Reverse Leakage @ Vr: 25 µA @ 600 V.
Інші пропозиції MUR2X120A06
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MUR2X120A06 | Виробник : GeneSiC Semiconductor |
 Description: DIODE GEN PURP 600V 120A SOT227Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A Current - Reverse Leakage @ Vr: 25 µA @ 600 V |
товару немає в наявності |
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MUR2X120A06 | Виробник : GeneSiC Semiconductor |
Discrete Semiconductor Modules 600V 240A Fwd Super Fast Recovery |
товару немає в наявності |