MUR410RL
Виробник: на замовлення 11690 шт:
термін постачання 14-28 дні (днів)
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Технічний опис MUR410RL
Description: DIODE GEN PURP 100V 4A AXIAL, Packaging: Tape & Reel (TR), Package / Case: DO-201AA, DO-27, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 4A, Supplier Device Package: Axial, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.
Інші пропозиції MUR410RL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MUR410RL | Виробник : onsemi |
Description: DIODE GEN PURP 100V 4A AXIAL Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
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MUR410RL | Виробник : onsemi |
Description: DIODE GEN PURP 100V 4A AXIAL Packaging: Cut Tape (CT) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |