MUR440S R7G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor CorporationDescription: DIODE GEN PURP 400V 4A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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Технічний опис MUR440S R7G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 4A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 65pF @ 4V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 4 A, Current - Reverse Leakage @ Vr: 10 µA @ 400 V.
Інші пропозиції MUR440S R7G
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MUR440S R7G | Виробник : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 4A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 65pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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MUR440S R7G | Виробник : Taiwan Semiconductor |
Rectifiers 50ns, 4A, 400V, High Efficient Recovery Rectifier |
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