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Технічний опис MURB3JG_R1_00001 Panjit
Description: DIODE STANDARD 600V 3A DO214AA, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DO-214AA (SMB), Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 28pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AA, SMB, Packaging: Tape & Reel (TR).
Інші пропозиції MURB3JG_R1_00001
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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MURB3JG_R1_00001 | Panjit International Inc. |
 Description: DIODE STANDARD 600V 3A DO214AACurrent - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 28pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3200 шт В кошику од. на суму грн. |
|
|
MURB3JG_R1_00001 | Panjit International Inc. |
Description: DIODE STANDARD 600V 3A DO214AA Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 28pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
MURB3JG_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 1.25V Kind of package: reel; tape Load current: 3A Leakage current: 8µA Max. forward impulse current: 100A Max. off-state voltage: 0.6kV |
товару немає в наявності |
В кошику од. на суму грн. |
| MURB3JG_R1_00001 |
|
Виробник: Panjit International Inc.
Description: DIODE STANDARD 600V 3A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 600V 3A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3200 шт
В кошику
од. на суму грн.
| MURB3JG_R1_00001 |
|
Виробник: Panjit International Inc.
Description: DIODE STANDARD 600V 3A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 600V 3A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| MURB3JG_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
Load current: 3A
Leakage current: 8µA
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 50ns; SMB; Ufmax: 1.25V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
Load current: 3A
Leakage current: 8µA
Max. forward impulse current: 100A
Max. off-state voltage: 0.6kV
товару немає в наявності
В кошику
од. на суму грн.