MURH10060 GeneSiC Semiconductor

Description: DIODE GEN PURP 600V 100A D-67, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: D-67, Current - Average Rectified (Io): 100A, Technology: Standard, Reverse Recovery Time (trr): 110 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: D-67, Packaging: Bulk, Current - Reverse Leakage @ Vr: 25 µA @ 600 V.