MURTA40060 GeneSiC Semiconductor
| Кількість | Ціна |
|---|---|
| 1+ | 13390.49 грн |
| 10+ | 11941.67 грн |
| 24+ | 10383.36 грн |
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Технічний опис MURTA40060 GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A 3TOWER, Current - Reverse Leakage @ Vr: 25 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 200A, Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Three Tower, Packaging: Bulk.
Інші пропозиції MURTA40060
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
MURTA40060 | GeneSiC Semiconductor |
 Description: DIODE MODULE GP 600V 200A 3TOWERCurrent - Reverse Leakage @ Vr: 25 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Three Tower Current - Average Rectified (Io) (per Diode): 200A Diode Configuration: 1 Pair Common Cathode Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Three Tower Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 48 шт В кошику од. на суму грн. |
| MURTA40060 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A 3TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
Description: DIODE MODULE GP 600V 200A 3TOWER
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Three Tower
Current - Average Rectified (Io) (per Diode): 200A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Three Tower
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 48 шт
В кошику
од. на суму грн.