MURTA40060R GeneSiC Semiconductor

Description: DIODE MODULE GP 600V 200A 3TOWER, Current - Reverse Leakage @ Vr: 25 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 200 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Three Tower, Current - Average Rectified (Io) (per Diode): 200A, Diode Configuration: 1 Pair Common Anode, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Three Tower, Packaging: Bulk.