Технічний опис MURTA60020 GeneSiC Semiconductor
Description: DIODE MODULE GP 200V 300A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 200 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 300A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A, Current - Reverse Leakage @ Vr: 25 µA @ 50 V.
Інші пропозиції MURTA60020
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MURTA60020 | Виробник : GeneSiC Semiconductor |
 Description: DIODE MODULE GP 200V 300A 3TOWERPackaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A Current - Reverse Leakage @ Vr: 25 µA @ 50 V |
товару немає в наявності |
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MURTA60020 | Виробник : GeneSiC Semiconductor |
Discrete Semiconductor Modules SI S-FST RECOV H3TWR 200-600V600A 50P/35 |
товару немає в наявності |