Технічний опис MV2N5116 Microchip Technology
Description: JFET P-CH 30V TO18, Packaging: Bulk, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Operating Temperature: -65°C ~ 200°C (TJ), FET Type: P-Channel, Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V, Voltage - Breakdown (V(BR)GSS): 30 V, Supplier Device Package: TO-18 (TO-206AA), Grade: Military, Drain to Source Voltage (Vdss): 30 V, Power - Max: 500 mW, Resistance - RDS(On): 100 Ohms, Voltage - Cutoff (VGS off) @ Id: 6 V @ 1 nA, Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 15 V, Qualification: MIL-PRF-19500.
Інші пропозиції MV2N5116
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
MV2N5116 | Виробник : Microchip Technology |
 Trans JFET P-CH 30V 3-Pin TO-18 Bag |
товару немає в наявності |
|
 |
MV2N5116 | Виробник : Microchip Technology |
Description: JFET P-CH 30V TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Drain to Source Voltage (Vdss): 30 V Power - Max: 500 mW Resistance - RDS(On): 100 Ohms Voltage - Cutoff (VGS off) @ Id: 6 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 15 V Qualification: MIL-PRF-19500 |
товару немає в наявності |
|
| MV2N5116 | Виробник : Microsemi |
JFET JFET |
товару немає в наявності |