| Кількість | Ціна |
|---|---|
| 8+ | 44.57 грн |
| 10+ | 39.96 грн |
| 100+ | 27.91 грн |
| 500+ | 24.46 грн |
| 1000+ | 22.27 грн |
| 3000+ | 19.10 грн |
| 6000+ | 19.03 грн |
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Технічний опис MVSF2N02ELT1G onsemi
Description: MOSFET N-CH 20V 2.8A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 5 V.
Інші пропозиції MVSF2N02ELT1G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
MVSF2N02ELT1G | onsemi |
 Description: MOSFET N-CH 20V 2.8A SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 5 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| MVSF2N02ELT1G | ON Semiconductor |
|
на замовлення 2000 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| MVSF2N02ELT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 2.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 2.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| MVSF2N02ELT1G |
|
Виробник: ON Semiconductor
на замовлення 2000 шт:
термін постачання 14-28 дні (днів)