Технічний опис MWI100-06A8 IXYS
Description: IGBT MODULE 600V 130A 410W E3, Packaging: Box, Package / Case: E3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: E3, IGBT Type: NPT, Current - Collector (Ic) (Max): 130 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 410 W, Current - Collector Cutoff (Max): 1.2 mA, Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V.
Інші пропозиції MWI100-06A8
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| MWI100-06A8 | Виробник : IXYS |
 Description: IGBT MODULE 600V 130A 410W E3Packaging: Box Package / Case: E3 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A NTC Thermistor: No Supplier Device Package: E3 IGBT Type: NPT Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 410 W Current - Collector Cutoff (Max): 1.2 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V |
товар відсутній |
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MWI100-06A8 | Виробник : IXYS |
Discrete Semiconductor Modules 100 Amps 600V |
товар відсутній |