Технічний опис MWI150-12T8T IXYS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Type of module: IGBT, Application: motors; photovoltaics, Power dissipation: 690W, Mechanical mounting: screw, Pulsed collector current: 300A, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Semiconductor structure: transistor/transistor, Case: E3-Pack, Gate-emitter voltage: ±20V, Collector current: 150A, Topology: IGBT three-phase bridge; NTC thermistor, кількість в упаковці: 1 шт.
Інші пропозиції MWI150-12T8T
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MWI150-12T8T | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Application: motors; photovoltaics Power dissipation: 690W Mechanical mounting: screw Pulsed collector current: 300A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Semiconductor structure: transistor/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 150A Topology: IGBT three-phase bridge; NTC thermistor кількість в упаковці: 1 шт |
товар відсутній |
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MWI150-12T8T | Виробник : IXYS | Description: MOD IGBT TRENCH SIXPACK E3 |
товар відсутній |
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MWI150-12T8T | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Application: motors; photovoltaics Power dissipation: 690W Mechanical mounting: screw Pulsed collector current: 300A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Semiconductor structure: transistor/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 150A Topology: IGBT three-phase bridge; NTC thermistor |
товар відсутній |