Інші пропозиції MWI50-12A7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| MWI50-12A7 | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge Max. off-state voltage: 1.2kV Collector current: 60A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Mechanical mounting: screw Technology: NPT кількість в упаковці: 1 шт |
товару немає в наявності |
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| MWI50-12A7 | Виробник : IXYS |
Description: IGBT MODULE 1200V 85A 350W E2 Packaging: Box Package / Case: E2 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A NTC Thermistor: No Supplier Device Package: E2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 4 mA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V |
товару немає в наявності |
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| MWI50-12A7 | Виробник : IXYS |
 IGBT Modules 50 Amps 1200V |
товару немає в наявності |
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| MWI50-12A7 | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge Max. off-state voltage: 1.2kV Collector current: 60A Case: E2-Pack Application: motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Mechanical mounting: screw Technology: NPT |
товару немає в наявності |