Технічний опис MWI50-12E7 ABB
Description: IGBT MODULE 1200V 90A 350W E2, Packaging: Box, Package / Case: E2, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: E2, IGBT Type: NPT, Current - Collector (Ic) (Max): 90 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 350 W, Current - Collector Cutoff (Max): 800 µA, Input Capacitance (Cies) @ Vce: 3.8 nF @ 25 V.
Інші пропозиції MWI50-12E7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| MWI50-12E7 |
IGBT-NPT3-шестерка, Vces=1200V, Ic25=90A, Ic80=62A, Vce(sat)=2.1V Силові IGBT-модулі |
товару немає в наявності |
В кошику од. на суму грн. | ||
| MWI50-12E7 | IXYS |
Description: IGBT MODULE 1200V 90A 350W E2Packaging: Box Package / Case: E2 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A NTC Thermistor: No Supplier Device Package: E2 IGBT Type: NPT Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 350 W Current - Collector Cutoff (Max): 800 µA Input Capacitance (Cies) @ Vce: 3.8 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
| MWI50-12E7 |
![]() |
IGBT-NPT3-шестерка, Vces=1200V, Ic25=90A, Ic80=62A, Vce(sat)=2.1V Силові IGBT-модулі
товару немає в наявності
В кошику
од. на суму грн.
| MWI50-12E7 |
![]() |
Виробник: IXYS
Description: IGBT MODULE 1200V 90A 350W E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: E2
IGBT Type: NPT
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 3.8 nF @ 25 V
Description: IGBT MODULE 1200V 90A 350W E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: E2
IGBT Type: NPT
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 800 µA
Input Capacitance (Cies) @ Vce: 3.8 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.


