MWI50-12T7T IXYS
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 270W
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 270W
Mechanical mounting: screw
кількість в упаковці: 1 шт
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Технічний опис MWI50-12T7T IXYS
Description: IGBT MODULE 1200V 80A 270W E2, Packaging: Box, Package / Case: E2, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: E2, IGBT Type: Trench, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 270 W, Current - Collector Cutoff (Max): 4 mA, Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V.
Інші пропозиції MWI50-12T7T
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MWI50-12T7T | Виробник : IXYS |
Description: IGBT MODULE 1200V 80A 270W E2 Packaging: Box Package / Case: E2 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: E2 IGBT Type: Trench Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 270 W Current - Collector Cutoff (Max): 4 mA Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V |
товар відсутній |
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MWI50-12T7T | Виробник : IXYS | IGBT Modules 50 Amps 1200V |
товар відсутній |
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MWI50-12T7T | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 50A Case: E2-Pack Application: motors; photovoltaics Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 270W Mechanical mounting: screw |
товар відсутній |