MWI60-12T6K IXYS
Виробник: IXYSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E1-Pack
Pulsed collector current: 70A
Collector current: 41A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: NPT
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Application: for UPS; motors
Power dissipation: 200W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
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Технічний опис MWI60-12T6K IXYS
Description: IGBT MODULE 1200V 58A 200W E1, Packaging: Box, Package / Case: E1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 35A, NTC Thermistor: Yes, Supplier Device Package: E1, IGBT Type: Trench, Current - Collector (Ic) (Max): 58 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 200 W, Current - Collector Cutoff (Max): 500 µA, Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V.
Інші пропозиції MWI60-12T6K
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| MWI60-12T6K | Виробник : IXYS |
Description: IGBT MODULE 1200V 58A 200W E1 Packaging: Box Package / Case: E1 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: E1 IGBT Type: Trench Current - Collector (Ic) (Max): 58 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 200 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V |
товар відсутній |
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MWI60-12T6K | Виробник : IXYS |
Discrete Semiconductor Modules 60 Amps 1200V |
товар відсутній |
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| MWI60-12T6K | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: E1-Pack Pulsed collector current: 70A Collector current: 41A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Technology: NPT Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Application: for UPS; motors Power dissipation: 200W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT |
товар відсутній |