MWI75-12T8T IXYS
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Mechanical mounting: screw
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 75A
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 360W
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Application: motors; photovoltaics
Mechanical mounting: screw
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: E3-Pack
Gate-emitter voltage: ±20V
Collector current: 75A
Topology: IGBT three-phase bridge; NTC thermistor
Power dissipation: 360W
кількість в упаковці: 1 шт
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Технічний опис MWI75-12T8T IXYS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Application: motors; photovoltaics, Mechanical mounting: screw, Pulsed collector current: 150A, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Type of module: IGBT, Semiconductor structure: transistor/transistor, Case: E3-Pack, Gate-emitter voltage: ±20V, Collector current: 75A, Topology: IGBT three-phase bridge; NTC thermistor, Power dissipation: 360W, кількість в упаковці: 1 шт.
Інші пропозиції MWI75-12T8T
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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MWI75-12T8T | Виробник : IXYS | Description: IGBT MOD TRENCH SIX-PACK E3 |
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MWI75-12T8T | Виробник : IXYS | Discrete Semiconductor Modules 75 Amps 1200V |
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MWI75-12T8T | Виробник : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Application: motors; photovoltaics Mechanical mounting: screw Pulsed collector current: 150A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 75A Topology: IGBT three-phase bridge; NTC thermistor Power dissipation: 360W |
товар відсутній |