MWI75-12T8T IXYS
Виробник: IXYS
Description: IGBT MODULE 1200V 110A 360W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: Trench
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 360 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 5.35 nF @ 25 V
Description: IGBT MODULE 1200V 110A 360W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: E3
IGBT Type: Trench
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 360 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 5.35 nF @ 25 V
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис MWI75-12T8T IXYS
Description: IGBT MODULE 1200V 110A 360W E3, Packaging: Box, Package / Case: E3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: E3, IGBT Type: Trench, Current - Collector (Ic) (Max): 110 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 360 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 5.35 nF @ 25 V.
Інші пропозиції MWI75-12T8T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
MWI75-12T8T | Виробник : IXYS |
 Discrete Semiconductor Modules 75 Amps 1200V |
товару немає в наявності |