MX2N5116 Microchip Technology
Виробник: Microchip Technology
Description: JFET P-CH 30V TO18
Qualification: MIL-PRF-19500
Grade: Military
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 175 Ohms
Power - Max: 500 mW
Drain to Source Voltage (Vdss): 30 V
Part Status: Active
Supplier Device Package: TO-18
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
FET Type: P-Channel
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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Технічний опис MX2N5116 Microchip Technology
Description: JFET P-CH 30V TO18, Qualification: MIL-PRF-19500, Grade: Military, Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 15 V, Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA, Resistance - RDS(On): 175 Ohms, Power - Max: 500 mW, Drain to Source Voltage (Vdss): 30 V, Part Status: Active, Supplier Device Package: TO-18, Voltage - Breakdown (V(BR)GSS): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V, FET Type: P-Channel, Operating Temperature: -65°C ~ 200°C (TJ), Mounting Type: Through Hole, Package / Case: TO-206AA, TO-18-3 Metal Can, Packaging: Bulk.

