MXLPLAD30KP51CAe3 Microchip Technology
Виробник: Microchip TechnologyDescription: TVS DIODE 51VWM 82.4VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 366A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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Технічний опис MXLPLAD30KP51CAe3 Microchip Technology
Description: TVS DIODE 51VWM 82.4VC PLAD, Packaging: Bulk, Package / Case: Nonstandard SMD, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 366A, Voltage - Reverse Standoff (Typ): 51V, Supplier Device Package: PLAD, Bidirectional Channels: 1, Voltage - Breakdown (Min): 56.7V, Voltage - Clamping (Max) @ Ipp: 82.4V, Power - Peak Pulse: 30000W (30kW), Power Line Protection: No, Grade: Military, Qualification: MIL-PRF-19500.
Інші пропозиції MXLPLAD30KP51CAe3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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MXLPLAD30KP51CAe3 | Виробник : Microsemi |
ESD Suppressors / TVS Diodes Bi-Directional TVS |
товару немає в наявності |