Технічний опис MXP120A080FE-T1GE3 Vishay Semiconductors
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19A; Idm: 60A; 56W, Technology: MaxSiC™; SiC, Mounting: SMD, Case: TO263-7, Kind of package: reel; tape, Polarisation: unipolar, Features of semiconductor devices: Kelvin terminal, Drain current: 19A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -5...20V, On-state resistance: 0.175Ω, Pulsed drain current: 60A, Power dissipation: 56W, Gate charge: 47.3nC.
Інші пропозиції MXP120A080FE-T1GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| MXP120A080FE-T1GE3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19A; Idm: 60A; 56W Technology: MaxSiC™; SiC Mounting: SMD Case: TO263-7 Kind of package: reel; tape Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Drain current: 19A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 0.175Ω Pulsed drain current: 60A Power dissipation: 56W Gate charge: 47.3nC |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
| MXP120A080FE-T1GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19A; Idm: 60A; 56W
Technology: MaxSiC™; SiC
Mounting: SMD
Case: TO263-7
Kind of package: reel; tape
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 19A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.175Ω
Pulsed drain current: 60A
Power dissipation: 56W
Gate charge: 47.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 19A; Idm: 60A; 56W
Technology: MaxSiC™; SiC
Mounting: SMD
Case: TO263-7
Kind of package: reel; tape
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 19A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.175Ω
Pulsed drain current: 60A
Power dissipation: 56W
Gate charge: 47.3nC
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.