MXSMBJ11CAe3

MXSMBJ11CAe3 Microchip Technology


RF01000+%283%29.pdf Виробник: Microchip Technology
Description: TVS DIODE 11VWM 18.2VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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Технічний опис MXSMBJ11CAe3 Microchip Technology

Description: TVS DIODE 11VWM 18.2VC DO214AA, Packaging: Bulk, Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 33A, Voltage - Reverse Standoff (Typ): 11V, Supplier Device Package: DO-214AA (SMBJ), Bidirectional Channels: 1, Voltage - Breakdown (Min): 12.2V, Voltage - Clamping (Max) @ Ipp: 18.2V, Power - Peak Pulse: 600W, Power Line Protection: No, Grade: Military, Qualification: MIL-PRF-19500.

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MXSMBJ11CAe3 MXSMBJ11CAe3 Виробник : Microsemi RF01000-603487.pdf ESD Suppressors / TVS Diodes Transient Voltage Suppressor
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