MXSMCJ24AE3/TR Microchip Technology
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 38.9VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMCJ (DO-214AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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Технічний опис MXSMCJ24AE3/TR Microchip Technology
Description: TVS DIODE 24VWM 38.9VC SMCJ, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 38.6A, Voltage - Reverse Standoff (Typ): 24V, Supplier Device Package: SMCJ (DO-214AB), Bidirectional Channels: 1, Voltage - Breakdown (Min): 26.7V, Voltage - Clamping (Max) @ Ipp: 38.9V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Part Status: Active.
Інші пропозиції MXSMCJ24AE3/TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
MXSMCJ24AE3/TR | MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7V; 38.6A; bidirectional; DO214AB,SMC; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7V Max. forward impulse current: 38.6A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Operating temperature: -65...150°C Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| MXSMCJ24AE3/TR |
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Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7V; 38.6A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7V; 38.6A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.


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