N0607N-ZK-E1-AY Renesas Electronics Corporation
Виробник: Renesas Electronics Corporation
Description: ABU / MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1W (Ta), 87.4W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 32.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 62.42 грн |
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Технічний опис N0607N-ZK-E1-AY Renesas Electronics Corporation
Description: ABU / MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 1W (Ta), 87.4W (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 32.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 65A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції N0607N-ZK-E1-AY за ціною від 51.70 грн до 210.06 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||
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N0607N-ZK-E1-AY | Виробник : Renesas Electronics |
MOSFETs P.TRANS. N-CH POWER MOSFET 60V TO-252 |
на замовлення 2840 шт: термін постачання 21-30 дні (днів) |
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N0607N-ZK-E1-AY | Виробник : Renesas Electronics Corporation |
Description: ABU / MOSFETPower Dissipation (Max): 1W (Ta), 87.4W (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 32.5A, 10V Current - Continuous Drain (Id) @ 25°C: 65A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 4V @ 1mA |
на замовлення 8866 шт: термін постачання 21-31 дні (днів) |
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