Технічний опис NAND512R3A2BZA6E ST
Description: IC FLASH 512MBIT PAR 63VFBGA, Packaging: Tray, Package / Case: 63-VFBGA, Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: FLASH - NAND, Memory Format: FLASH, Supplier Device Package: 63-VFBGA (8.5x15), Write Cycle Time - Word, Page: 60ns, Memory Interface: Parallel, Access Time: 60 ns, Memory Organization: 64M x 8, DigiKey Programmable: Not Verified.
Інші пропозиції NAND512R3A2BZA6E
Фото | Назва | Виробник | Інформація |
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NAND512R3A2BZA6E | Виробник : STMicroelectronics |
![]() Packaging: Tray Package / Case: 63-VFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 63-VFBGA (8.5x15) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 60 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
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