Технічний опис NBRB8H100T4G onsemi
Description: DIODE SCHOTTKY 100V 8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 600pF @ 4V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: D2PAK, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 710 mV @ 8 A, Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V, Qualification: AEC-Q101.
Інші пропозиції NBRB8H100T4G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NBRB8H100T4G | Виробник : ON Semiconductor |
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на замовлення 4800 шт: термін постачання 14-28 дні (днів) |
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NBRB8H100T4G | Виробник : onsemi |
Description: DIODE SCHOTTKY 100V 8A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 600pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 8 A Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
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NBRB8H100T4G | Виробник : onsemi |
Description: DIODE SCHOTTKY 100V 8A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 600pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 8 A Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |