| Кількість | Ціна |
|---|---|
| 6+ | 57.97 грн |
| 10+ | 47.26 грн |
| 25+ | 39.19 грн |
| 100+ | 36.44 грн |
| 250+ | 34.11 грн |
| 500+ | 32.70 грн |
| 1000+ | 31.01 грн |
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Технічний опис NCP5109BDR2G onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, DigiKey Programmable: Not Verified, Current - Peak Output (Source, Sink): 250mA, 500mA, Logic Voltage - VIL, VIH: 0.8V, 2.3V, Gate Type: IGBT, N-Channel MOSFET, Number of Drivers: 2, Driven Configuration: Half-Bridge, Channel Type: Independent, Rise / Fall Time (Typ): 85ns, 35ns, Supplier Device Package: 8-SOIC, High Side Voltage - Max (Bootstrap): 200 V, Input Type: Non-Inverting, Voltage - Supply: 10V ~ 20V, Operating Temperature: -40°C ~ 125°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції NCP5109BDR2G за ціною від 36.58 грн до 141.14 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NCP5109BDR2G | onsemi |
 Description: IC GATE DRVR HALF-BRIDGE 8SOICHigh Side Voltage - Max (Bootstrap): 200 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Current - Peak Output (Source, Sink): 250mA, 500mA Logic Voltage - VIL, VIH: 0.8V, 2.3V Gate Type: IGBT, N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 85ns, 35ns Supplier Device Package: 8-SOIC |
на замовлення 1297 шт: термін постачання 21-31 дні (днів) |
|
| NCP5109BDR2G |
|
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
High Side Voltage - Max (Bootstrap): 200 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 85ns, 35ns
Supplier Device Package: 8-SOIC
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
High Side Voltage - Max (Bootstrap): 200 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 85ns, 35ns
Supplier Device Package: 8-SOIC
на замовлення 1297 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 141.14 грн |
| 10+ | 84.53 грн |
| 25+ | 70.95 грн |
| 100+ | 52.23 грн |
| 250+ | 45.17 грн |
| 500+ | 40.83 грн |
| 1000+ | 36.58 грн |