NCP5109BDR2G onsemi
Виробник: onsemiGate Drivers MOSFET / IGBT Drivers, Dual Input, High Voltage, High and Low Side, 200 V
на замовлення 4110 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 108.15 грн |
| 10+ | 72.76 грн |
| 100+ | 44.21 грн |
| 500+ | 40.46 грн |
| 1000+ | 35.68 грн |
| 2500+ | 34.72 грн |
| 5000+ | 31.49 грн |
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Технічний опис NCP5109BDR2G onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 200 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 85ns, 35ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.3V, Current - Peak Output (Source, Sink): 250mA, 500mA, DigiKey Programmable: Not Verified.
Інші пропозиції NCP5109BDR2G за ціною від 36.71 грн до 141.65 грн
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NCP5109BDR2G | Виробник : onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 85ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.3V Current - Peak Output (Source, Sink): 250mA, 500mA DigiKey Programmable: Not Verified |
на замовлення 1297 шт: термін постачання 21-31 дні (днів) |
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NCP5109BDR2G | Виробник : ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Voltage class: 200V Output current: -500...250mA Impulse rise time: 160ns Pulse fall time: 75ns кількість в упаковці: 1 шт |
товару немає в наявності |
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NCP5109BDR2G | Виробник : onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 85ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.3V Current - Peak Output (Source, Sink): 250mA, 500mA DigiKey Programmable: Not Verified |
товару немає в наявності |
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NCP5109BDR2G | Виробник : ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Voltage class: 200V Output current: -500...250mA Impulse rise time: 160ns Pulse fall time: 75ns |
товару немає в наявності |