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NCP51152BADR2G

NCP51152BADR2G onsemi

ncp51152-d.pdf
Виробник: onsemi
Gate Drivers ISOLATED SINGLE CHANNEL GATE DRIVER IN SOIC8-NB
на замовлення 2500 шт:
термін постачання 210-219 дні (днів)
КількістьЦіна
2+169.39 грн
10+149.95 грн
100+98.68 грн
250+86.69 грн
500+83.87 грн
1000+66.75 грн
2500+64.35 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
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Технічний опис NCP51152BADR2G onsemi

Description: ISOLATED SINGLE CHANNEL GATE DRI, Voltage - Output Supply: 9.5V ~ 30V, Number of Channels: 1, Pulse Width Distortion (Max): 5ns, Propagation Delay tpLH / tpHL (Max): 55ns, 55ns, Common Mode Transient Immunity (Min): 200kV/µs, Rise / Fall Time (Typ): 12ns, 8.3ns, Supplier Device Package: 8-SOIC, Approval Agency: CQC, UL, VDE, Voltage - Isolation: 3750Vrms, Current - Output High, Low: 4.5A, 9A, Technology: Capacitive Coupling, Current - Peak Output: 4.5A, 9A, Operating Temperature: -40°C ~ 125°C, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

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NCP51152BADR2G NCP51152BADR2G onsemi ncp51152-d.pdf Description: ISOLATED SINGLE CHANNEL GATE DRI
Voltage - Output Supply: 9.5V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 5ns
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Common Mode Transient Immunity (Min): 200kV/µs
Rise / Fall Time (Typ): 12ns, 8.3ns
Supplier Device Package: 8-SOIC
Approval Agency: CQC, UL, VDE
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 4.5A, 9A
Technology: Capacitive Coupling
Current - Peak Output: 4.5A, 9A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NCP51152BADR2G NCP51152BADR2G onsemi ncp51152-d.pdf Description: ISOLATED SINGLE CHANNEL GATE DRI
Voltage - Output Supply: 9.5V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 5ns
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Common Mode Transient Immunity (Min): 200kV/µs
Rise / Fall Time (Typ): 12ns, 8.3ns
Supplier Device Package: 8-SOIC
Approval Agency: CQC, UL, VDE
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 4.5A, 9A
Technology: Capacitive Coupling
Current - Peak Output: 4.5A, 9A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
NCP51152BADR2G ncp51152-d.pdf
NCP51152BADR2G
Виробник: onsemi
Description: ISOLATED SINGLE CHANNEL GATE DRI
Voltage - Output Supply: 9.5V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 5ns
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Common Mode Transient Immunity (Min): 200kV/µs
Rise / Fall Time (Typ): 12ns, 8.3ns
Supplier Device Package: 8-SOIC
Approval Agency: CQC, UL, VDE
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 4.5A, 9A
Technology: Capacitive Coupling
Current - Peak Output: 4.5A, 9A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NCP51152BADR2G ncp51152-d.pdf
NCP51152BADR2G
Виробник: onsemi
Description: ISOLATED SINGLE CHANNEL GATE DRI
Voltage - Output Supply: 9.5V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 5ns
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Common Mode Transient Immunity (Min): 200kV/µs
Rise / Fall Time (Typ): 12ns, 8.3ns
Supplier Device Package: 8-SOIC
Approval Agency: CQC, UL, VDE
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 4.5A, 9A
Technology: Capacitive Coupling
Current - Peak Output: 4.5A, 9A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.