| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 180.43 грн |
| 10+ | 159.72 грн |
| 100+ | 105.10 грн |
| 250+ | 92.34 грн |
| 500+ | 89.34 грн |
| 1000+ | 71.10 грн |
| 2500+ | 68.54 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
220-229 дні (днів)
Мінімальна партія:
2 шт
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Технічний опис NCP51152BADR2G onsemi
Description: ISOLATED SINGLE CHANNEL GATE DRI, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C, Current - Peak Output: 4.5A, 9A, Technology: Capacitive Coupling, Current - Output High, Low: 4.5A, 9A, Voltage - Isolation: 3750Vrms, Approval Agency: CQC, UL, VDE, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 12ns, 8.3ns, Common Mode Transient Immunity (Min): 200kV/µs, Propagation Delay tpLH / tpHL (Max): 55ns, 55ns, Pulse Width Distortion (Max): 5ns, Number of Channels: 1, Voltage - Output Supply: 9.5V ~ 30V.
Інші пропозиції NCP51152BADR2G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
NCP51152BADR2G | onsemi |
 Description: ISOLATED SINGLE CHANNEL GATE DRIPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 4.5A, 9A Technology: Capacitive Coupling Current - Output High, Low: 4.5A, 9A Voltage - Isolation: 3750Vrms Approval Agency: CQC, UL, VDE Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 8.3ns Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 55ns, 55ns Pulse Width Distortion (Max): 5ns Number of Channels: 1 Voltage - Output Supply: 9.5V ~ 30V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
|
|
NCP51152BADR2G | onsemi |
Description: ISOLATED SINGLE CHANNEL GATE DRI Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 4.5A, 9A Technology: Capacitive Coupling Current - Output High, Low: 4.5A, 9A Voltage - Isolation: 3750Vrms Approval Agency: CQC, UL, VDE Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 8.3ns Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 55ns, 55ns Pulse Width Distortion (Max): 5ns Number of Channels: 1 Voltage - Output Supply: 9.5V ~ 30V |
товару немає в наявності |
В кошику од. на суму грн. |
| NCP51152BADR2G | ON Semiconductor |
Isolated Single Channel Gate Driver |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| NCP51152BADR2G |
|
Виробник: onsemi
Description: ISOLATED SINGLE CHANNEL GATE DRI
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 4.5A, 9A
Technology: Capacitive Coupling
Current - Output High, Low: 4.5A, 9A
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 8.3ns
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 9.5V ~ 30V
Description: ISOLATED SINGLE CHANNEL GATE DRI
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 4.5A, 9A
Technology: Capacitive Coupling
Current - Output High, Low: 4.5A, 9A
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 8.3ns
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 9.5V ~ 30V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NCP51152BADR2G |
|
Виробник: onsemi
Description: ISOLATED SINGLE CHANNEL GATE DRI
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 4.5A, 9A
Technology: Capacitive Coupling
Current - Output High, Low: 4.5A, 9A
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 8.3ns
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 9.5V ~ 30V
Description: ISOLATED SINGLE CHANNEL GATE DRI
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 4.5A, 9A
Technology: Capacitive Coupling
Current - Output High, Low: 4.5A, 9A
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 8.3ns
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 9.5V ~ 30V
товару немає в наявності
В кошику
од. на суму грн.
| NCP51152BADR2G |
|
Виробник: ON Semiconductor
Isolated Single Channel Gate Driver
Isolated Single Channel Gate Driver
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.