NCP5181DR2G onsemi
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 1.4A, 2.2A
DigiKey Programmable: Not Verified
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Технічний опис NCP5181DR2G onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 40ns, 20ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: MOSFET (N-Channel), Logic Voltage - VIL, VIH: 0.8V, 2.3V, Current - Peak Output (Source, Sink): 1.4A, 2.2A, DigiKey Programmable: Not Verified.
Інші пропозиції NCP5181DR2G за ціною від 68.88 грн до 240.16 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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NCP5181DR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.2...1.4A Number of channels: 2 Mounting: SMD Protection: undervoltage UVP Operating temperature: -40...125°C Pulse fall time: 40ns Voltage class: 600V Kind of package: reel; tape Impulse rise time: 60ns Topology: IGBT half-bridge; MOSFET half-bridge Supply voltage: 10...20V DC |
на замовлення 1703 шт: термін постачання 14-30 дні (днів) |
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NCP5181DR2G | ON Semiconductor |
Driver 2.2A 2-OUT High Side/Low Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC N T/R |
на замовлення 54948 шт: термін постачання 21-31 дні (днів) |
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NCP5181DR2G | ON Semiconductor |
Driver 2.2A 2-OUT High Side/Low Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC N T/R |
на замовлення 316 шт: термін постачання 21-31 дні (днів) |
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NCP5181DR2G | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOICOperating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Current - Peak Output (Source, Sink): 1.4A, 2.2A Logic Voltage - VIL, VIH: 0.8V, 2.3V Gate Type: MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 40ns, 20ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V |
на замовлення 7471 шт: термін постачання 21-31 дні (днів) |
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NCP5181DR2G | onsemi |
Gate Drivers HV MOSFET DRIVER |
на замовлення 590 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| NCP5181DR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.2...1.4A
Number of channels: 2
Mounting: SMD
Protection: undervoltage UVP
Operating temperature: -40...125°C
Pulse fall time: 40ns
Voltage class: 600V
Kind of package: reel; tape
Impulse rise time: 60ns
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 10...20V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.2...1.4A
Number of channels: 2
Mounting: SMD
Protection: undervoltage UVP
Operating temperature: -40...125°C
Pulse fall time: 40ns
Voltage class: 600V
Kind of package: reel; tape
Impulse rise time: 60ns
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 10...20V DC
на замовлення 1703 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 114.41 грн |
| 5+ | 98.01 грн |
| 25+ | 93.89 грн |
| 100+ | 88.12 грн |
| NCP5181DR2G |
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Виробник: ON Semiconductor
Driver 2.2A 2-OUT High Side/Low Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC N T/R
Driver 2.2A 2-OUT High Side/Low Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC N T/R
на замовлення 54948 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 242+ | 145.17 грн |
| 500+ | 139.32 грн |
| 1000+ | 131.12 грн |
| NCP5181DR2G |
![]() |
Виробник: ON Semiconductor
Driver 2.2A 2-OUT High Side/Low Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC N T/R
Driver 2.2A 2-OUT High Side/Low Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC N T/R
на замовлення 316 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 242+ | 145.17 грн |
| NCP5181DR2G |
![]() |
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1.4A, 2.2A
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1.4A, 2.2A
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
на замовлення 7471 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240.16 грн |
| 10+ | 147.35 грн |
| 25+ | 125.39 грн |
| 100+ | 94.39 грн |
| 250+ | 82.96 грн |
| 500+ | 75.92 грн |
| 1000+ | 68.88 грн |
| NCP5181DR2G |
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Виробник: onsemi
Gate Drivers HV MOSFET DRIVER
Gate Drivers HV MOSFET DRIVER
на замовлення 590 шт:
термін постачання 21-30 дні (днів)





