NCP5181DR2G onsemi
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 1.4A, 2.2A
DigiKey Programmable: Not Verified
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Технічний опис NCP5181DR2G onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 40ns, 20ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: MOSFET (N-Channel), Logic Voltage - VIL, VIH: 0.8V, 2.3V, Current - Peak Output (Source, Sink): 1.4A, 2.2A, DigiKey Programmable: Not Verified.
Інші пропозиції NCP5181DR2G за ціною від 70.96 грн до 247.39 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NCP5181DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A Case: SO8 Kind of package: reel; tape Output current: -2.2...1.4A Impulse rise time: 60ns Number of channels: 2 Supply voltage: 10...20V DC Voltage class: 600V Type of integrated circuit: driver Pulse fall time: 40ns Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Mounting: SMD Protection: undervoltage UVP Operating temperature: -40...125°C |
на замовлення 1710 шт: термін постачання 14-30 дні (днів) |
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NCP5181DR2G | onsemi |
Gate Drivers HV MOSFET DRIVER |
на замовлення 590 шт: термін постачання 21-30 дні (днів) |
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NCP5181DR2G | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Current - Peak Output (Source, Sink): 1.4A, 2.2A Logic Voltage - VIL, VIH: 0.8V, 2.3V Gate Type: MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 40ns, 20ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V |
на замовлення 7471 шт: термін постачання 21-31 дні (днів) |
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| NCP5181DR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
Case: SO8
Kind of package: reel; tape
Output current: -2.2...1.4A
Impulse rise time: 60ns
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Pulse fall time: 40ns
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Mounting: SMD
Protection: undervoltage UVP
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
Case: SO8
Kind of package: reel; tape
Output current: -2.2...1.4A
Impulse rise time: 60ns
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Pulse fall time: 40ns
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Mounting: SMD
Protection: undervoltage UVP
Operating temperature: -40...125°C
на замовлення 1710 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 117.86 грн |
| 5+ | 100.96 грн |
| 25+ | 96.72 грн |
| 100+ | 91.63 грн |
| NCP5181DR2G |
|
Виробник: onsemi
Gate Drivers HV MOSFET DRIVER
Gate Drivers HV MOSFET DRIVER
на замовлення 590 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 202.28 грн |
| 10+ | 179.94 грн |
| 25+ | 147.31 грн |
| 100+ | 125.46 грн |
| NCP5181DR2G |
|
Виробник: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1.4A, 2.2A
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1.4A, 2.2A
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
на замовлення 7471 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 247.39 грн |
| 10+ | 151.80 грн |
| 25+ | 129.16 грн |
| 100+ | 97.23 грн |
| 250+ | 85.46 грн |
| 500+ | 78.21 грн |
| 1000+ | 70.96 грн |