NCP81075MTTXG onsemi
Виробник: onsemi
Description: IC GATE DRVR HI/LOW SIDE 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Voltage - Supply: 8.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 10-WDFN (4x4)
Rise / Fall Time (Typ): 8ns, 7ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 10WDFN
Packaging: Cut Tape (CT)
Package / Case: 10-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Voltage - Supply: 8.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 10-WDFN (4x4)
Rise / Fall Time (Typ): 8ns, 7ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2415 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 212.92 грн |
10+ | 184.32 грн |
25+ | 174.21 грн |
100+ | 134.44 грн |
250+ | 120.63 грн |
500+ | 116.27 грн |
1000+ | 95.07 грн |
Відгуки про товар
Написати відгук
Технічний опис NCP81075MTTXG onsemi
Description: IC GATE DRVR HI/LOW SIDE 10WDFN, Packaging: Tape & Reel (TR), Package / Case: 10-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 140°C (TJ), Voltage - Supply: 8.5V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 200 V, Supplier Device Package: 10-WDFN (4x4), Rise / Fall Time (Typ): 8ns, 7ns, Channel Type: Independent, Driven Configuration: High-Side or Low-Side, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.7V, Current - Peak Output (Source, Sink): 4A, 4A, Part Status: Active, DigiKey Programmable: Not Verified.
Інші пропозиції NCP81075MTTXG за ціною від 100.4 грн до 232.72 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NCP81075MTTXG | Виробник : onsemi | Gate Drivers HIGH PERF DUAL MOS GATE DRIVER |
на замовлення 8000 шт: термін постачання 762-771 дні (днів) |
|
|||||||||||||||||
NCP81075MTTXG | Виробник : ON Semiconductor | Driver 2-OUT High and Low Side Inv/Non-Inv 8-Pin WDFN EP T/R |
товар відсутній |
||||||||||||||||||
NCP81075MTTXG | Виробник : ON Semiconductor | Driver 2-OUT High and Low Side Inv/Non-Inv 8-Pin WDFN EP T/R |
товар відсутній |
||||||||||||||||||
NCP81075MTTXG | Виробник : ON Semiconductor | Gate Power Driver IC |
товар відсутній |
||||||||||||||||||
NCP81075MTTXG | Виробник : ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; WDFN10; -4÷4A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: WDFN10 Output current: -4...4A Number of channels: 2 Supply voltage: 8.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 8ns Pulse fall time: 7ns кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||||
NCP81075MTTXG | Виробник : onsemi |
Description: IC GATE DRVR HI/LOW SIDE 10WDFN Packaging: Tape & Reel (TR) Package / Case: 10-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 140°C (TJ) Voltage - Supply: 8.5V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 200 V Supplier Device Package: 10-WDFN (4x4) Rise / Fall Time (Typ): 8ns, 7ns Channel Type: Independent Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.7V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active DigiKey Programmable: Not Verified |
товар відсутній |
||||||||||||||||||
NCP81075MTTXG | Виробник : ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; WDFN10; -4÷4A; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Case: WDFN10 Output current: -4...4A Number of channels: 2 Supply voltage: 8.5...20V DC Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 8ns Pulse fall time: 7ns |
товар відсутній |