NCV8412ASTT3G onsemi
Виробник: onsemi
Description: SELF-PROTECTED LOW SIDE DRIVER W
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: SOT-223 (TO-261)
Ratio - Input:Output: 1:1
Current - Output (Max): 5.9A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 42V
Input Type: Non-Inverting
Rds On (Typ): 145mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 4000+ | 37.12 грн |
| 8000+ | 34.90 грн |
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Технічний опис NCV8412ASTT3G onsemi
Description: ONSEMI - NCV8412ASTT3G - Leistungs-MOSFET, n-Kanal, 44 V, 3.9 A, 0.145 ohm, SOT-223, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 44V, rohsCompliant: YES, Dauer-Drainstrom Id: 3.9A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, MSL: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.6V, euEccn: NLR, Verlustleistung: 2.2W, Bauform - Transistor: SOT-223, Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.145ohm, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції NCV8412ASTT3G за ціною від 36.16 грн до 147.48 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NCV8412ASTT3G | ONSEMI |
Description: ONSEMI - NCV8412ASTT3G - Leistungs-MOSFET, n-Kanal, 44 V, 3.9 A, 0.145 ohm, SOT-223, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 44V rohsCompliant: YES Dauer-Drainstrom Id: 3.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 2.2W Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.145ohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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NCV8412ASTT3G | onsemi |
Description: SELF-PROTECTED LOW SIDE DRIVER W Qualification: AEC-Q101 Grade: Automotive Part Status: Active Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Supplier Device Package: SOT-223 (TO-261) Ratio - Input:Output: 1:1 Current - Output (Max): 5.9A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 42V Input Type: Non-Inverting Rds On (Typ): 145mOhm Output Configuration: Low Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
на замовлення 11909 шт: термін постачання 21-31 дні (днів) |
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NCV8412ASTT3G | ONSEMI |
Description: ONSEMI - NCV8412ASTT3G - Leistungs-MOSFET, n-Kanal, 44 V, 3.9 A, 0.145 ohm, SOT-223, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 44V rohsCompliant: YES Dauer-Drainstrom Id: 3.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 2.2W Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.145ohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 60 шт В кошику од. на суму грн. | ||||||||||||||
| NCV8412ASTT3G | onsemi |
Power Switch ICs - Power Distribution Self-Protected Low Side Driver with In-Rush Current Management Low Side SmartFET |
на замовлення 7992 шт: термін постачання 21-30 дні (днів) |
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| NCV8412ASTT3G |
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Виробник: ONSEMI
Description: ONSEMI - NCV8412ASTT3G - Leistungs-MOSFET, n-Kanal, 44 V, 3.9 A, 0.145 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 44V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 2.2W
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.145ohm
SVHC: No SVHC (25-Jun-2025)
Description: ONSEMI - NCV8412ASTT3G - Leistungs-MOSFET, n-Kanal, 44 V, 3.9 A, 0.145 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 44V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 2.2W
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.145ohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 91.27 грн |
| 50+ | 59.53 грн |
| NCV8412ASTT3G |
|
Виробник: onsemi
Description: SELF-PROTECTED LOW SIDE DRIVER W
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: SOT-223 (TO-261)
Ratio - Input:Output: 1:1
Current - Output (Max): 5.9A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 42V
Input Type: Non-Inverting
Rds On (Typ): 145mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: SELF-PROTECTED LOW SIDE DRIVER W
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: SOT-223 (TO-261)
Ratio - Input:Output: 1:1
Current - Output (Max): 5.9A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 42V
Input Type: Non-Inverting
Rds On (Typ): 145mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
на замовлення 11909 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 147.48 грн |
| 10+ | 88.50 грн |
| 25+ | 74.43 грн |
| 100+ | 54.95 грн |
| 250+ | 47.62 грн |
| 500+ | 43.12 грн |
| 1000+ | 38.70 грн |
| NCV8412ASTT3G |
|
Виробник: ONSEMI
Description: ONSEMI - NCV8412ASTT3G - Leistungs-MOSFET, n-Kanal, 44 V, 3.9 A, 0.145 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 44V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 2.2W
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.145ohm
SVHC: No SVHC (25-Jun-2025)
Description: ONSEMI - NCV8412ASTT3G - Leistungs-MOSFET, n-Kanal, 44 V, 3.9 A, 0.145 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 44V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 2.2W
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.145ohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
| NCV8412ASTT3G |
|
Виробник: onsemi
Power Switch ICs - Power Distribution Self-Protected Low Side Driver with In-Rush Current Management Low Side SmartFET
Power Switch ICs - Power Distribution Self-Protected Low Side Driver with In-Rush Current Management Low Side SmartFET
на замовлення 7992 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 142.26 грн |
| 10+ | 87.54 грн |
| 25+ | 64.28 грн |
| 100+ | 50.47 грн |
| 250+ | 43.70 грн |
| 500+ | 39.61 грн |
| 1000+ | 36.16 грн |