Технічний опис NDB6060L ON Semiconductor / Fairchild
Description: MOSFET N-CH 60V 48A D2PAK, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 24A, 10V, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V.
Інші пропозиції NDB6060L
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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NDB6060L | onsemi |
 Description: MOSFET N-CH 60V 48A D2PAKDrain to Source Voltage (Vdss): 60 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 24A, 10V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
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NDB6060L | onsemi |
Description: MOSFET N-CH 60V 48A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 24A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
NDB6060L | ONSEMI |
Description: ONSEMI - NDB6060L - Leistungs-MOSFET, n-Kanal, 60 V, 48 A, 0.02 ohm, TO-263AB, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60 Dauer-Drainstrom Id: 48 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 100 Bauform - Transistor: TO-263AB Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.02 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 2 SVHC: No SVHC (08-Jul-2021) |
товару немає в наявності |
В кошику од. на суму грн. |
| NDB6060L |
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Виробник: onsemi
Description: MOSFET N-CH 60V 48A D2PAK
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Description: MOSFET N-CH 60V 48A D2PAK
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| NDB6060L |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 48A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 24A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 60V 48A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 24A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| NDB6060L |
|
Виробник: ONSEMI
Description: ONSEMI - NDB6060L - Leistungs-MOSFET, n-Kanal, 60 V, 48 A, 0.02 ohm, TO-263AB, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 48
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 100
Bauform - Transistor: TO-263AB
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.02
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 2
SVHC: No SVHC (08-Jul-2021)
Description: ONSEMI - NDB6060L - Leistungs-MOSFET, n-Kanal, 60 V, 48 A, 0.02 ohm, TO-263AB, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 48
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 100
Bauform - Transistor: TO-263AB
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.02
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 2
SVHC: No SVHC (08-Jul-2021)
товару немає в наявності
В кошику
од. на суму грн.