NDD03N40Z-1G onsemi

Description: MOSFET N-CH 400V 2.1A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V, Drain to Source Voltage (Vdss): 400 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 37W (Tc), Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V, Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.