NDD03N50Z-1G onsemi
Виробник: onsemiDescription: MOSFET N-CH 500V 2.6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 25 V
на замовлення 2656 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1025+ | 22.21 грн |
Відгуки про товар
Написати відгук
Технічний опис NDD03N50Z-1G onsemi
Description: MOSFET N-CH 500V 2.6A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V, Power Dissipation (Max): 58W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: IPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 25 V.
Інші пропозиції NDD03N50Z-1G за ціною від 24.87 грн до 24.87 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||
|---|---|---|---|---|---|---|---|---|---|
| NDD03N50Z-1G | Виробник : ONSEMI |
Description: ONSEMI - NDD03N50Z-1G - NDD03N50Z-1G, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 2656 шт: термін постачання 21-31 дні (днів) |
|
|||||
|
|
NDD03N50Z-1G | Виробник : onsemi |
Description: MOSFET N-CH 500V 2.6A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 25 V |
товару немає в наявності |