NDD03N60ZT4G ONSEMI
Виробник: ONSEMI
Description: ONSEMI - NDD03N60ZT4G - MOSFET,N CH,W DIODE,600V,2.6A,DPAK
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - NDD03N60ZT4G - MOSFET,N CH,W DIODE,600V,2.6A,DPAK
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
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Технічний опис NDD03N60ZT4G ONSEMI
Description: MOSFET N-CH 600V 2.6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V, Power Dissipation (Max): 61W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V.
Інші пропозиції NDD03N60ZT4G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NDD03N60ZT4G | Виробник : ON Semiconductor | Trans MOSFET N-CH 600V 2.6A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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NDD03N60ZT4G | Виробник : onsemi |
Description: MOSFET N-CH 600V 2.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V |
товар відсутній |
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NDD03N60ZT4G | Виробник : onsemi | MOSFET NFET DPAK 2.6A 3.6R |
товар відсутній |