Технічний опис NDFPD1N150CG ON Semiconductor
Description: MOSFET N-CH 1500V 100MA TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V, Power Dissipation (Max): 2W (Ta), 20W (Tc), Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 30 V.
Інші пропозиції NDFPD1N150CG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NDFPD1N150CG | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 1.5KV 0.1A 3-Pin(3+Tab) TO-220F-3FS Tube |
товару немає в наявності |
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NDFPD1N150CG | Виробник : onsemi |
Description: MOSFET N-CH 1500V 100MA TO220-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 150Ohm @ 50mA, 10V Power Dissipation (Max): 2W (Ta), 20W (Tc) Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 30 V |
товару немає в наявності |
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NDFPD1N150CG | Виробник : ON Semiconductor |
MOSFET N-CH Power MOSFET 1500V 0.1A |
товару немає в наявності |