NDH8321C Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: MOSFET N/P-CH 20V 3.8A SUPERSOT
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-TSOP (0.130", 3.30mm Width)
Packaging: Bulk
Part Status: Active
Supplier Device Package: SuperSOT™-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V, 23nC @ 4.5V
Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V, 70mOhm @ 2.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V, 865pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 2.7A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 800mW (Ta)
Technology: MOSFET (Metal Oxide)
Відгуки про товар
Написати відгук
Технічний опис NDH8321C Fairchild Semiconductor
Description: MOSFET N/P-CH 20V 3.8A SUPERSOT, Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-TSOP (0.130", 3.30mm Width), Packaging: Bulk, Part Status: Active, Supplier Device Package: SuperSOT™-8, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V, 23nC @ 4.5V, Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V, 70mOhm @ 2.7A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V, 865pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 2.7A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 800mW (Ta), Technology: MOSFET (Metal Oxide).