NDPL180N10BG ON Semiconductor

Description: MOSFET N-CH 100V 180A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 6950 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Part Status: Obsolete, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 2.1W (Ta), 200W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 15V, 50A, Current - Continuous Drain (Id) @ 25°C: 180A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.