NDS356AP-NB8L005A Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: -30V P-CHANNEL LOGIC LEVEL ENHAN
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
| Кількість | Ціна |
|---|---|
| 1075+ | 18.65 грн |
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Технічний опис NDS356AP-NB8L005A Fairchild Semiconductor
Description: -30V P-CHANNEL LOGIC LEVEL ENHAN, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.3A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V.
Інші пропозиції NDS356AP-NB8L005A за ціною від 18.65 грн до 18.65 грн
| Фото | Назва | Виробник | Інформація |
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NDS356AP-NB8L005A | Виробник : onsemi |
Description: -30V P-CHANNEL LOGIC LEVEL ENHAN Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.3A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V |
на замовлення 50469 шт: термін постачання 21-31 дні (днів) |
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| NDS356AP-NB8L005A | Виробник : onsemi |
onsemi -30V P-Channel Logic Level Enhancement Mode Field Effect Transistor |
товару немає в наявності |
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| NDS356AP_NB8L005A | Виробник : onsemi / Fairchild |
onsemi |
товару немає в наявності |