NDS356AP onsemi
Виробник: onsemi
Description: MOSFET P-CH 30V 1.1A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис NDS356AP onsemi
Description: MOSFET P-CH 30V 1.1A SUPERSOT3, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції NDS356AP
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
|
NDS356AP | onsemi |
Description: MOSFET P-CH 30V 1.1A SUPERSOT3 Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.3A, 10V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
NDS356AP | onsemi / Fairchild |
MOSFETs P-Channel Logic |
товару немає в наявності |
В кошику од. на суму грн. |
| NDS356AP |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 1.1A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 1.1A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| NDS356AP |
|
Виробник: onsemi / Fairchild
MOSFETs P-Channel Logic
MOSFETs P-Channel Logic
товару немає в наявності
В кошику
од. на суму грн.