NDS8934 Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: MOSFET 2P-CH 20V 3.8A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 20V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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Технічний опис NDS8934 Fairchild Semiconductor
Description: MOSFET 2P-CH 20V 3.8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.8A, Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 10V, Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SOIC.