Технічний опис NDS9958 NS
Description: MOSFET N/P-CH 20V 3.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.5A, Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V, Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC.
Інші пропозиції NDS9958
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
NDS9958 | onsemi |
Description: MOSFET N/P-CH 20V 3.5A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
|
NDS9958 | onsemi / Fairchild |
MOSFETs DISC BY MFG 2/02 |
товару немає в наявності |
В кошику од. на суму грн. |
| NDS9958 |
![]() |
Виробник: onsemi
Description: MOSFET N/P-CH 20V 3.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET N/P-CH 20V 3.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NDS9958 |
![]() |
Виробник: onsemi / Fairchild
MOSFETs DISC BY MFG 2/02
MOSFETs DISC BY MFG 2/02
товару немає в наявності
В кошику
од. на суму грн.




