Технічний опис NE3511S02-A California Eastern Labora
Description: RF MOSFET GAAS HJ-FET 2V S02, Current - Test: 10 mA, Voltage - Test: 2 V, Voltage - Rated: 4 V, Supplier Device Package: S02, Noise Figure: 0.3dB, Technology: GaAs HJ-FET, Gain: 13.5dB, Frequency: 12GHz, Current Rating (Amps): 70mA, Package / Case: 4-SMD, Flat Leads, Packaging: Bulk.
Інші пропозиції NE3511S02-A
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
NE3511S02-A | CEL |
 Description: RF MOSFET GAAS HJ-FET 2V S02Current - Test: 10 mA Voltage - Test: 2 V Voltage - Rated: 4 V Supplier Device Package: S02 Noise Figure: 0.3dB Technology: GaAs HJ-FET Gain: 13.5dB Frequency: 12GHz Current Rating (Amps): 70mA Package / Case: 4-SMD, Flat Leads Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| NE3511S02-A |
|
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V S02
Current - Test: 10 mA
Voltage - Test: 2 V
Voltage - Rated: 4 V
Supplier Device Package: S02
Noise Figure: 0.3dB
Technology: GaAs HJ-FET
Gain: 13.5dB
Frequency: 12GHz
Current Rating (Amps): 70mA
Package / Case: 4-SMD, Flat Leads
Packaging: Bulk
Description: RF MOSFET GAAS HJ-FET 2V S02
Current - Test: 10 mA
Voltage - Test: 2 V
Voltage - Rated: 4 V
Supplier Device Package: S02
Noise Figure: 0.3dB
Technology: GaAs HJ-FET
Gain: 13.5dB
Frequency: 12GHz
Current Rating (Amps): 70mA
Package / Case: 4-SMD, Flat Leads
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.