Технічний опис NE4210S01-T1B NEC
Description: RF MOSFET GAAS HJ-FET 2V SMD, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, Current Rating (Amps): 15mA, Frequency: 12GHz, Gain: 13dB, Technology: GaAs HJ-FET, Noise Figure: 0.5dB, Supplier Device Package: SMD, Voltage - Rated: 4 V, Voltage - Test: 2 V, Current - Test: 10 mA.
Інші пропозиції NE4210S01-T1B
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| NE4210S01-T1B | CEL |
Description: RF MOSFET GAAS HJ-FET 2V SMD Packaging: Tape & Reel (TR) Package / Case: 4-SMD Current Rating (Amps): 15mA Frequency: 12GHz Gain: 13dB Technology: GaAs HJ-FET Noise Figure: 0.5dB Supplier Device Package: SMD Voltage - Rated: 4 V Voltage - Test: 2 V Current - Test: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. |
| NE4210S01-T1B |
Виробник: CEL
Description: RF MOSFET GAAS HJ-FET 2V SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD
Current Rating (Amps): 15mA
Frequency: 12GHz
Gain: 13dB
Technology: GaAs HJ-FET
Noise Figure: 0.5dB
Supplier Device Package: SMD
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: RF MOSFET GAAS HJ-FET 2V SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD
Current Rating (Amps): 15mA
Frequency: 12GHz
Gain: 13dB
Technology: GaAs HJ-FET
Noise Figure: 0.5dB
Supplier Device Package: SMD
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
товару немає в наявності
В кошику
од. на суму грн.