NE68033-T1B-A CEL
Виробник: CEL
Description: RF TRANS NPN 10V 10GHZ SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SOT-23-3
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Технічний опис NE68033-T1B-A CEL
Description: RF TRANS NPN 10V 10GHZ SOT-23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 9dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 35mA, Voltage - Collector Emitter Breakdown (Max): 10V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V, Frequency - Transition: 10GHz, Noise Figure (dB Typ @ f): 1.8dB @ 2GHz, Supplier Device Package: SOT-23-3.
Інші пропозиції NE68033-T1B-A
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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NE68033-T1B-A | CEL |
Description: RF TRANS NPN 10V 10GHZ SOT-23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 9dB Power - Max: 200mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Supplier Device Package: SOT-23-3 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
NE68033-T1B-A | CEL |
RF Bipolar Transistors NPN High Frequency |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| NE68033-T1B-A |
|
Виробник: CEL
Description: RF TRANS NPN 10V 10GHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SOT-23-3
Description: RF TRANS NPN 10V 10GHZ SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Supplier Device Package: SOT-23-3
товару немає в наявності
В кошику
од. на суму грн.
| NE68033-T1B-A |
|
Виробник: CEL
RF Bipolar Transistors NPN High Frequency
RF Bipolar Transistors NPN High Frequency
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.