Технічний опис NE68033-T1B-A Renesas
Description: RF TRANS NPN 10V 10GHZ SOT-23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 9dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 35mA, Voltage - Collector Emitter Breakdown (Max): 10V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V, Frequency - Transition: 10GHz, Noise Figure (dB Typ @ f): 1.8dB @ 2GHz, Supplier Device Package: SOT-23-3.
Інші пропозиції NE68033-T1B-A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
NE68033-T1B-A | Виробник : CEL |
 Description: RF TRANS NPN 10V 10GHZ SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 9dB Power - Max: 200mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Supplier Device Package: SOT-23-3 |
товару немає в наявності |
|
|
|
NE68033-T1B-A | Виробник : CEL |
Description: RF TRANS NPN 10V 10GHZ SOT-23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 9dB Power - Max: 200mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Supplier Device Package: SOT-23-3 |
товару немає в наявності |
|
 |
NE68033-T1B-A | Виробник : CEL |
RF Bipolar Transistors NPN High Frequency |
товару немає в наявності |