
NE68139R-T1-A CEL

Description: RF TRANS NPN 10V 9GHZ SOT-143R
Packaging: Tape & Reel (TR)
Package / Case: SOT-143R
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 3V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 1GHz
Supplier Device Package: SOT-143R
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Технічний опис NE68139R-T1-A CEL
Description: RF TRANS NPN 10V 9GHZ SOT-143R, Packaging: Tape & Reel (TR), Package / Case: SOT-143R, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 13.5dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 65mA, Voltage - Collector Emitter Breakdown (Max): 10V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 3V, Frequency - Transition: 9GHz, Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 1GHz, Supplier Device Package: SOT-143R.
Інші пропозиції NE68139R-T1-A
Фото | Назва | Виробник | Інформація |
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NE68139R-T1-A | Виробник : CEL |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-143R Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13.5dB Power - Max: 200mW Current - Collector (Ic) (Max): 65mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 3V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 1GHz Supplier Device Package: SOT-143R |
товару немає в наявності |