NE68139R-T1 CEL
Виробник: CEL
Description: RF TRANS NPN 10V 9GHZ SOT-143R
Supplier Device Package: SOT-143R
Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 1GHz
Frequency - Transition: 9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 3V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 65mA
Power - Max: 200mW
Gain: 13.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-143R
Packaging: Cut Tape (CT)
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Технічний опис NE68139R-T1 CEL
Description: RF TRANS NPN 10V 9GHZ SOT-143R, Supplier Device Package: SOT-143R, Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 1GHz, Frequency - Transition: 9GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 3V, Voltage - Collector Emitter Breakdown (Max): 10V, Current - Collector (Ic) (Max): 65mA, Power - Max: 200mW, Gain: 13.5dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SOT-143R, Packaging: Tape & Reel (TR).
Інші пропозиції NE68139R-T1
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NE68139R-T1 | Виробник : CEL |
Description: RF TRANS NPN 10V 9GHZ SOT-143R Supplier Device Package: SOT-143R Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 1GHz Frequency - Transition: 9GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 3V Voltage - Collector Emitter Breakdown (Max): 10V Current - Collector (Ic) (Max): 65mA Power - Max: 200mW Gain: 13.5dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-143R Packaging: Tape & Reel (TR) |
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