Технічний опис NE68519-T1-A NEC
Description: RF TRANS NPN 6V 12GHZ SOT-523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 11dB, Power - Max: 125mW, Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 6V, DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V, Frequency - Transition: 12GHz, Noise Figure (dB Typ @ f): 1.5dB @ 2GHz, Supplier Device Package: SOT-523.
Інші пропозиції NE68519-T1-A
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
NE68519-T1-A | CEL |
 Description: RF TRANS NPN 6V 12GHZ SOT-523Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 11dB Power - Max: 125mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 6V DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Supplier Device Package: SOT-523 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
NE68519-T1-A | CEL |
Description: RF TRANS NPN 6V 12GHZ SOT-523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 11dB Power - Max: 125mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 6V DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Supplier Device Package: SOT-523 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
NE68519-T1-A | CEL |
RF Bipolar Transistors NPN High Frequency |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| NE68519-T1-A |
|
Виробник: CEL
Description: RF TRANS NPN 6V 12GHZ SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Supplier Device Package: SOT-523
Description: RF TRANS NPN 6V 12GHZ SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Supplier Device Package: SOT-523
товару немає в наявності
В кошику
од. на суму грн.
| NE68519-T1-A |
|
Виробник: CEL
Description: RF TRANS NPN 6V 12GHZ SOT-523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Supplier Device Package: SOT-523
Description: RF TRANS NPN 6V 12GHZ SOT-523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Supplier Device Package: SOT-523
товару немає в наявності
В кошику
од. на суму грн.
| NE68519-T1-A |
|
Виробник: CEL
RF Bipolar Transistors NPN High Frequency
RF Bipolar Transistors NPN High Frequency
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.