NE85639R-T1-A CEL
Виробник: CEL
Description: RF TRANS NPN 12V 9GHZ SOT143R
Supplier Device Package: SOT-143R
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz
Frequency - Transition: 9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Gain: 13.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-143R
Packaging: Tape & Reel (TR)
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Технічний опис NE85639R-T1-A CEL
Description: RF TRANS NPN 12V 9GHZ SOT143R, Supplier Device Package: SOT-143R, Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz, Frequency - Transition: 9GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V, Voltage - Collector Emitter Breakdown (Max): 12V, Current - Collector (Ic) (Max): 100mA, Power - Max: 200mW, Gain: 13.5dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SOT-143R, Packaging: Tape & Reel (TR).
Інші пропозиції NE85639R-T1-A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
NE85639R-T1-A | Виробник : CEL |
Description: RF TRANS NPN 12V 9GHZ SOT143R Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Gain: 13.5dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-143R Packaging: Cut Tape (CT) Supplier Device Package: SOT-143R Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz Frequency - Transition: 9GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V |
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