NE856M02-T1-AZ CEL
Виробник: CEL
Description: SAME AS 2SC5336 NPN SILICON AMPL
Current - Collector (Ic) (Max): 100mA
Power - Max: 1.2W
Gain: 12dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
Supplier Device Package: SOT-89
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Frequency - Transition: 6.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Voltage - Collector Emitter Breakdown (Max): 12V
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Технічний опис NE856M02-T1-AZ CEL
Description: SAME AS 2SC5336 NPN SILICON AMPL, Current - Collector (Ic) (Max): 100mA, Power - Max: 1.2W, Gain: 12dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR), Part Status: Last Time Buy, Supplier Device Package: SOT-89, Noise Figure (dB Typ @ f): 1.8dB @ 1GHz, Frequency - Transition: 6.5GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V, Voltage - Collector Emitter Breakdown (Max): 12V.
Інші пропозиції NE856M02-T1-AZ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
NE856M02-T1-AZ | Виробник : CEL |
RF Bipolar Transistors NPN Low Distort Amp |
товару немає в наявності |