Технічний опис NESG3031M14-T3-A NEC
Description: RF SMALL SIGNAL TRANSISTOR, Part Status: Obsolete, Supplier Device Package: 4L2MM, M14, Noise Figure (dB Typ @ f): 0.6dB ~ 1.5dB @ 2.4GHz ~ 5.8GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 6mA, 2V, Voltage - Collector Emitter Breakdown (Max): 4.3V, Current - Collector (Ic) (Max): 35mA, Power - Max: 150mW, Gain: 7.5dB ~ 16dB, Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 4-SMD, Flat Leads, Packaging: Bulk.
Інші пропозиції NESG3031M14-T3-A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
NESG3031M14-T3-A | Виробник : Renesas Electronics America Inc |
 Description: RF SMALL SIGNAL TRANSISTORPart Status: Obsolete Supplier Device Package: 4L2MM, M14 Noise Figure (dB Typ @ f): 0.6dB ~ 1.5dB @ 2.4GHz ~ 5.8GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 6mA, 2V Voltage - Collector Emitter Breakdown (Max): 4.3V Current - Collector (Ic) (Max): 35mA Power - Max: 150mW Gain: 7.5dB ~ 16dB Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Packaging: Bulk |
товару немає в наявності |